Datasheet4U Logo Datasheet4U.com

AP9926TGO - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – AP9926TGO

Datasheet Details

Part number AP9926TGO
Manufacturer Advanced Power Electronics
File Size 105.33 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9926TGO Datasheet
Additional preview pages of the AP9926TGO datasheet.

📁 Similar Datasheet

  • AP9926A - 20V N+N-Channel Enhancement Mode MOSFET (APM)
  • AP9971AGM - Dual N-Channel MOSFET (VBsemi)
  • AP9971GH - N-Channel MOSFET (VBsemi)
  • AP9971GI-HF - N-Channel 60V MOSFET (VBsemi)
  • AP9972GS - N-Channel 60V MOSFET (VBsemi)
  • AP9974AGP - N-Channel 60V MOSFET (VBsemi)
  • AP9974GP - N-Channel 60-V MOSFET (VBsemi)
  • AP9980GM-HF - N-Channel 80V MOSFET (VBsemi)
  • AP9997GH - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • AP9997GK - N-Channel 100V MOSFET (VBsemi)
Other Datasheets by Advanced Power Electronics
  • AP9926EM-A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926EO - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926GEM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926GEO-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926GM - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926GM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926GO - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP9926M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP9926TGO Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable www.DataSheet4U.com of 2.5V gate drive D2 S2 G2 S2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G1 S1 D1 S1 20V 32mΩ 4.7A ▼ Surface mount package TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 ±12 4.7 3.8 20 1 0.
Published: |