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AP9930AGM - 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power Electronics Corp. AP9930AGM RoHS-compliant Product 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on LCD Monitor Inverter ▼ RoHS Compliant Description P2G N2D/P2D P1S/P2S P1G SO-8 N2G N1S/N2S N1D/P1D N1G N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID 30V 35mΩ 5.2A -30V 72mΩ -3.5A Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. P1S P2S P1G P2G The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.