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AP9932GM - 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

P2G N2D/P2D P1S/P2S P1G SO-8 N2G N1S/N2S N1D/P1D N1G N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID 30V 40mΩ 4.3A -30V 70mΩ -3.3A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectivenes

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Advanced Power Electronics Corp. AP9932GM Pb Free Plating Product 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on LCD Monitor Inverter Description P2G N2D/P2D P1S/P2S P1G SO-8 N2G N1S/N2S N1D/P1D N1G N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID 30V 40mΩ 4.3A -30V 70mΩ -3.3A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. P1S P2S P1G P2G The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.