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AP9980GM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Part number AP9980GM
Manufacturer Advanced Power Electronics
File Size 205.00 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.BVDSS RDS(ON) ID 80V 52mΩ 4.6A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipati

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