AP9980GM-HF - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp
General Description
AP9980 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
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Advanced Power Electronics Corp.
AP9980GM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant & Halogen-Free
D2 D2 D1 D1
SO-8
G2
S2 G1 S1
BVDSS RDS(ON) ID
80V 52mΩ 4.6A
Description
AP9980 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
G1
D1 G2
D2
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
AP9980GM-HF Datasheet
