| Part Number | AP9980GM-HF |
|---|---|
| Manufacturer | VBsemi |
| Overview |
AP9980GM-HF-VB
AP9980GM-HF-VB Datasheet N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
80
0.062 at VGS = 10 V
ID (A)a 3.5
Qg (Typ.) 7.3 nC
FEATURES • Halogen-.
* Halogen-free According to IEC 61249-2-21 Definition * Trench Power MOSFET * 100 % Rg and UIS Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * DC/DC Conversion - Notebook System Power S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ra. |
AP9980GM-HF Datasheet
The AP9980GM-HF is a N-Channel 80V MOSFET.
| Part Number | AP9980GM-HF |
|---|---|
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Manufacturer | Advanced Power Electronics Corp |
| Overview | AP9980 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extr. GS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range 80 +20 4.6 2.9 30 2 3.2 -55 to 150 -55 to 150 V V A A A W mJ ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambien. |