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AP9998GI-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP9998 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Datasheet preview – AP9998GI-HF

Datasheet Details

Part number AP9998GI-HF
Manufacturer Advanced Power Electronics
File Size 81.31 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9998GI-HF Datasheet
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AP9998GI-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 25mΩ 44A S Description AP9998 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications.
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