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AP9T19GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the AP9T19GJ, a member of the AP9T19GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Datasheet Summary

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Datasheet Details

Part number AP9T19GJ
Manufacturer Advanced Power Electronics
File Size 69.89 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet AP9T19GJ Datasheet
Additional preview pages of the AP9T19GJ datasheet.

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Full PDF Text Transcription

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AP9T19GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 12V 16mΩ 33A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current 1 Rating 12 ±12 33 21 80 25 0.
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