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2N4427 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Datasheet Summary

Description

Silicon NPN transistor, designed for VHF and UHF equipment.

Applications include amplifier; pre-driver, driver, and output stages.

Also suitable for oscillator and frequency-multiplier functions.

Features

  • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz TO-39 1. Emitter 2. Base 3. Collector www. DataSheet4U. com.

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Datasheet Details

Part number 2N4427
Manufacturer Advanced Power Technology
File Size 364.81 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz TO-39 1. Emitter 2. Base 3. Collector www.DataSheet4U.com DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 2.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 1.0 5.
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