APT1002RBN- (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET
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D
TO-254
G S
APT1002RCN 1000V 5.5A 2.00Ω
TM
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APT1002RCN UNIT Volts Amps
1000 5.5 22 ±30 150 1.2 -55 to 150 300
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
APT1002RCN Datasheet
