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APT10050B2LC APT10050LLC
1000V 21A 0.500W
B2LC
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. • Identical Specifications: T-MAX™ or TO-264 Package • Lower Gate Charge & Capacitance • Easier To Drive • 100% Avalanche Tested • Faster switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
T-MAX™
TO-264
LLC
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT10050LLC Datasheet
