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APT10050B2VFR APT10050LVFR
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
B2VR
1000V 21A 0.500W
T-MAX™
TO-264
LVR
• Identical Specifications: T-MAX™ or TO-264 Package • Faster Switching • Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
D G S
• 100% Avalanche Tested
All Ratings: TC = 25°C unless otherwise specified.
APT10050 UNIT Volts Amps
1000 21 84 ±30 ±40 520 4.
APT10050B2VFR Datasheet
