APT10050JN Datasheet | Advanced Power Technology

2 T- APT10050JN 1000V 20.5A 0.50Ω "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, l LM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 10050JN UNIT Volts Amps - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 20.5 82 ± 30 520 4.16 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 and Inductive Current Clamped Volts Watts W/°C °C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current MIN APT10050JN UNIT Volts ID(ON) Amps (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 2.5m A) RDS(ON) Ohms IDSS IGSS VGS(TH) 250 1000 ± 100 2 4 µA n A Volts THERMAL CHARACTERISTICS Symbol RΘJC RΘCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint pound and Planer Heat Sink Surface.) MIN TYP MAX UNIT °C/W 050-0037 Rev F 0.24...