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APT10050JLC
1000V 19A
S G D
0.500Ω
S
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. • Lower Gate Charge • Faster Switching • 100% Avalanche Tested
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
SO
ISOTOP ®
2 T-
27
"UL Recognized"
• Lower Input Capacitance • Easier To Drive • Popular SOT-227 Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT10050JLC Datasheet
