APT10050JLC Datasheet | Advanced Power Technology

1000V 19A 0.500Ω POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. - Lower Gate Charge - Faster Switching - 100% Avalanche Tested MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter ISOTOP ® 2 T- "UL Recognized" - Lower Input Capacitance - Easier To Drive - Popular SOT-227 Package All Ratings: TC = 25°C unless otherwise specified. APT10050JLC UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I D T E A C M N R A O V F D A IN 1000 19 76 ±30 ±40 450 3.6 -55 to 150 300 19 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps m J STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain...