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APT10M11B2VR
100V 100A 0.011Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • New T-MAX™ Package
(Clip-mounted TO-247 Package)
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1 6 6
All Ratings: TC = 25°C unless otherwise specified.
APT10M1B2VR UNIT Volts Amps
100 100 400 ±30 ±40 520 4.
APT10M11B2VR Datasheet
