Advanced Power Technology APT10M30AVR
MOSFET
| Part No. | APT10M30AVR |
|---|---|
| Datasheet | APT10M30AVR Download |
| Manufacturer |  Advanced Power Technology |
| Description | MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 5 5 All Ratings: TC = 25°C unless otherwise specified. APT10M30AVR UNIT Volts Amps 100 65 260 ±30 ±40 235 1.88 -55 to 150 300 65 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 5 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1500 STATICELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 5 MIN TYP MAX UNIT Volts Amps 100 65 0.030 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V,...
