APT11GP60BDQB - POWER MOS 7 IGBT

Advanced Power Technology

Datasheet Details

Part number	APT11GP60BDQB
Manufacturer	Advanced Power Technology
File Size	233.51 KB
Description	POWER MOS 7 IGBT
Datasheet	APT11GP60BDQB Datasheet
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TYPICAL PERFORMANCE CURVES APT11GP60BDQB APT11GP60BDQB www.DataSheet4U.com 600V POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. TO-247 G • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage • SSOA rated C E C G E All Ratings: TC = 25°C unless otherwise specified.

Published: Mar 27, 2010 |