APT11GP60BDQB
APT11GP60BDQB is POWER MOS 7 IGBT manufactured by Advanced Power Technology.
TYPICAL PERFORMANCE CURVES
APT11GP60BDQB APT11GP60BDQB
..
600V
POWER MOS 7 IGBT
®
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
TO-247
- Low Conduction Loss
- Low Gate Charge
- Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage
- SSOA rated
All Ratings: TC = 25°C unless otherwise specified.
APT11GP60BDQB UNIT Volts
600 ±20 41 20 45 45A @ 600V 187...
