Advanced Power Technology APT11GP60BDQB
POWER MOS 7 IGBT
| Part No. | APT11GP60BDQB |
|---|---|
| Datasheet | APT11GP60BDQB Download |
| Manufacturer |  Advanced Power Technology |
| Description | POWER MOS 7 IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage● SSOA rated C E C G E All Ratings: TC = 25°C unless otherwise specified. APT11GP60BDQB UNIT Volts 600 ±20 41 20 45 45A @ 600V 187 -55 to 150 300 Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC
ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 600 3 4.5 2.2 2.1 250 µA nA 3-2005 050-7447 Rev A 6 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 11A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 11A, Tj = 125°C) Colle...
