APT11N80GC3 Datasheet | Advanced Power Technology

.. 800V 7.4A 0.500Ω Super Junction MOSFET TO-257 C O OLMOS Power Semiconductors - Ultra low RDS(ON) - Low Miller Capacitance - Ultra Low Gate Charge, Qg - Avalanche Energy Rated - Hermetic TO-257 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt All Ratings: TC = 25°C unless otherwise specified. APT11N80GC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 800 7.4 22.2 ±20 ±30 77 0.62 -55 to 150 260 50 7.4 0.2 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction...