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APT11N80GC3
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800V 7.4A 0.500Ω
Super Junction MOSFET
TO-257
C O OLMOS
Power Semiconductors
• Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-257 Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT11N80GC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
800 7.4 22.2 ±20 ±30 77 0.62 -55 to 150 260 50 7.4 0.2
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
APT11N80GC3 Datasheet
