Advanced Power Technology APT11N80GC3
Super Junction MOSFET
| Part No. | APT11N80GC3 |
|---|---|
| Datasheet | APT11N80GC3 Download |
| Manufacturer |  Advanced Power Technology |
| Description | Super Junction MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt D G S All Ratings: TC = 25°C unless otherwise specified. APT11N80GC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 800 7.4 22.2 ±20 ±30 77 0.62 -55 to 150 260 50 7.4 0.2 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 7.4A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 6 6 Volts Watts W/°C °C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 470 STATICELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.43 0.5 0.50 20 200 ±100 2.1 3 3.9 (VGS = 10V, ID = 7.1A) Oh...