APT35GN120B Datasheet | Advanced Power Technology

TYPICAL PERFORMANCE CURVES ® APT35GN120B APT35GN120BG- APT35GN120B(G) 1200V - G Denotes Ro HS pliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses. TO -2 47 - - - - - 1200V NPT Field Stop Trench Gate: Low VCE(on) Easy Paralleling 10µs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS .. MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current All Ratings: TC = 25°C unless otherwise specified. APT35GN120B(G) UNIT Volts 1200 ±30 94 46 105 105A @ 1200V 379 -55 to 150 300 Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1m A, Tj = 25°C) MIN TYP MAX Units 1200 5 1.4 2 2 5.8 1.7 1.9 6.5 2.1 Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES RGINT 100 TBD 600 6 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor n A...