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APT35GP120J - POWER MOS 7 IGBT

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Part number APT35GP120J
Manufacturer Advanced Power Technology
File Size 126.11 KB
Description POWER MOS 7 IGBT
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APT35GP120J 1200V POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ISOTOP ® ® E C E SO 2 T- 27 "UL Recognized" • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff www.DataSheet4U.com MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient • 50 kHz operation @ 800V, 14A • 20 kHz operation @ 800V, 25A • RBSOA rated G E C All Ratings: TC = 25°C unless otherwise specified.
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