• Part: APT4016BN
  • Description: N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
  • Category: MOSFET
  • Manufacturer: Advanced Power Technology
  • Size: 51.97 KB
Download APT4016BN Datasheet PDF
Advanced Power Technology
APT4016BN
APT4016BN is N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS manufactured by Advanced Power Technology.
TO-247 APT4016BN 400V ® 31.0A 0.16Ω 29.0A 0.18Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT4018BN 400V - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT 4016BN APT 4018BN UNIT Volts Amps 400 31 124 ± 30 360 2.9 400 29 116 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current MIN APT4016BN APT4018BN APT4016BN APT4018BN APT4016BN APT4018BN UNIT Volts 400 400 31 Amps ID(ON) (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 29 0.16 Ohms RDS(ON) 0.18 250 1000 ± 100 2 4 µA n A...