APT4016BVFR Datasheet | Advanced Power Technology

400V 27A 0.16Ω APT4016SVFR APT4016BVFRG- APT4016SVFRG- - G Denotes Ro HS pliant, Pb Free Terminal Finish. POWER MOS V ® V® FREDFET BVFR TO -2 47 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. .. D3PAK SVFR - Faster Switching - Lower Leakage - Avalanche Energy Rated - TO-247 or Surface Mount D3Pak - Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current All Ratings: TC = 25°C unless otherwise specified. APT4016B_SVFR(G) UNIT Volts Amps 400 27 108 ±30 ±40 280 2.24 -55 to 150 300 27 30 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Volts Watts W/°C °C Amps m J (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Single Pulse Avalanche...