APT40M75JN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Advanced Power Technology

Datasheet Details

Part number	APT40M75JN
Manufacturer	Advanced Power Technology
File Size	62.40 KB
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Datasheet	APT40M75JN Datasheet
Additional preview pages of the APT40M75JN datasheet.

📁 Similar Datasheet

APT4014BVFR - N-Channel MOSFET (INCHANGE)
APT4020BVFR - N-Channel MOSFET (INCHANGE)
APT40DC120HJ - SiC Diode Full Bridge Power Module (Microsemi)
APT40DC60HJ - SiC Diode Full Bridge Power Module (Microsemi)
APT40DR160HJ - Schottky Diode (Microsemi)
APT40DS04HJ - Schottky Diode (Microsemi)
APT40DS10HJ - Schottky Diode (Microsemi)
APT40GF120JRDQ2 - FAST IGBT & FRED (Microsemi Corporation)
APT40SM120B - Silicon Carbide N-Channel Power MOSFET (Microsemi)
APT41F100J - N-Channel FREDFET (Microsemi Corporation)

Other Datasheets by Advanced Power Technology

APT40M70B2LVFR - POWER MOS V FREDFET
APT40M70B2LVFRG - POWER MOS V FREDFET
APT40M70B2VFR - POWER MOS V FREDFET
APT40M70B2VFRG - POWER MOS V FREDFET
APT40M70JVFR - POWER MOS V FREDFET
APT40M70JVR - Power MOSFET
APT40M70LVR - Power MOSFET
APT40M35JVFR - POWER MOS V FREDFET

Full PDF Text Transcription

Click to expand full text

D S G D S G S SO 2 T- 27 APT40M75JN 400V 56.0A 0.075Ω APT40M90JN 400V 51.0A 0.090Ω "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 40M75JN APT 40M90JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 400 56 224 ± 30 520 4.16 400 51 204 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.

Published: Apr 23, 2005 |