APT45GP120B2DQ2G datasheet by Advanced Power Technology.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | APT45GP120B2DQ2G |
|---|---|
| Datasheet | APT45GP120B2DQ2G APT45GP120B2DQ2 Datasheet (PDF) |
| File Size | 436.46 KB |
| Manufacturer | Advanced Power Technology |
| Description | IGBT |
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POWER MOS 7® IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff 100 kHz operation @ 800V, 16A 50 kHz operation @ 800V, 28A RBSOA Rated T-MaxTM GC E...
View all Advanced Power Technology datasheets
| Part Number | Description |
|---|---|
| APT45GP120B2DQ2 | IGBT |
| APT451R1AN | N-Channel Power MOSFET |
| APT451R1BN | N-Channel Power MOSFET |
| APT451R1CN | N-Channel Power MOSFET |
| APT451R1GN | N-Channel Power MOSFET |
| APT4525AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT4530AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT4585AN | N-Channel Power MOSFET |
| APT4585BN | N-Channel Power MOSFET |
| APT4585CN | N-Channel Power MOSFET |
