APT5010B2VR
500V 47A 0.100Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
T-MAX™
- Faster Switching
- Lower Leakage
- 100% Avalanche Tested
- New T-MAX™ Package
(Clip-mounted TO-247 Package)
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
All Ratings: TC = 25°C unless otherwise specified.
APT5010B2VR UNIT Volts Amps
500 47 188 ±30 ±40 520 4.16 -55 to 150 300 47 50
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
Volts Watts W/°C °C...
