APT5017BVFR - Power MOSFET

Advanced Power Technology

Datasheet Details

Part number	APT5017BVFR
Manufacturer	Advanced Power Technology
File Size	62.58 KB
Description	Power MOSFET
Datasheet	APT5017BVFR Datasheet
Additional preview pages of the APT5017BVFR datasheet.

📁 Similar Datasheet

APT5017BVFR - N-Channel MOSFET (INCHANGE)
APT5017BVR - N-Channel MOSFET (INCHANGE)
APT5010B2FLL - N-Channel MOSFET (INCHANGE)
APT5010B2LL - N-Channel MOSFET (INCHANGE)
APT5010JLLU2 - ISOTOP Boost chopper MOSFET (Microsemi Corporation)
APT5010JLLU3 - ISOTOP Buck chopper MOSFET (Microsemi Corporation)
APT5010LFLL - N-Channel MOSFET (INCHANGE)
APT5010LLL - N-Channel MOSFET (INCHANGE)
APT5010LVFR - N-Channel MOSFET (INCHANGE)
APT5010LVR - N-Channel MOSFET (INCHANGE)

Other Datasheets by Advanced Power Technology

APT5017BVR - Power MOSFET
APT5017BLC - Power MOSFET
APT5017SLC - Power MOSFET
APT5017SVR - Power MOSFET
APT5010B2 - Power MOSFET
APT5010B2FLL - Power MOSFET
APT5010B2LC - high voltage N-Channel enhancement mode power MOSFET
APT5010B2LL - Power MOSFET

Full PDF Text Transcription

Click to expand full text

APT5017BVFR 500V 30A 0.170Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% Avalanche Tested • Popular TO-247 Package G FREDFET D S All Ratings: TC = 25°C unless otherwise specified. APT5017BVFR UNIT Volts Amps 500 30 120 ±30 ±40 370 2.

Published: Apr 23, 2005 |