APT5017BVR
500V 30A 0.170Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-247
- Faster Switching
- Lower Leakage
- 100% Avalanche Tested
- Popular TO-247 Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
All Ratings: TC = 25°C unless otherwise specified.
APT5017BVR UNIT Volts Amps
500 30 120 ±30 ±40 370 2.96 -55 to 150 300 30 30
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
Volts Watts W/°C °C Amps m J
(Repetitive and...
