Datasheet4U Logo Datasheet4U.com

APT5020BLC - Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

📥 Download Datasheet

Datasheet preview – APT5020BLC

Datasheet Details

Part number APT5020BLC
Manufacturer Advanced Power Technology
File Size 35.77 KB
Description Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
Datasheet download datasheet APT5020BLC Datasheet
Additional preview pages of the APT5020BLC datasheet.

📁 Similar Datasheet

Other Datasheets by Advanced Power Technology
  • APT5020BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
  • APT5020BVFR - Power MOSFET
  • APT5020BVR - Power MOSFET
  • APT5020SLC - Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
  • APT5020SVFR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
  • APT5020SVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
  • APT5022AVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
  • APT5022BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Full PDF Text Transcription

Click to expand full text
500V 26A 0.200W APT5020BLC APT5020SLC BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. • Identical Specifications: TO-247 or Surface Mount D3PAK Package • Lower Gate Charge & Capacitance • Easier To Drive • 100% Avalanche Tested • Faster switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter SLC D G S All Ratings: TC = 25°C unless otherwise specified.
Published: |