Full PDF Text Transcription for APT5020SVR (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APT5020SVR. For precise diagrams, and layout, please refer to the original PDF.
APT5020SVR 500V 26A 0.200Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET...
View more extracted text
enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D3PAK • Faster Switching • Lower Leakage • 100% Avalanche Tested • Surface Mount D3PAK Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT5020SVR UNIT Volts Amps 500 26 104 ±30 ±40 300 2.