Click to expand full text
APT5024SVR
500V 22A 0.240Ω
POWER MOS V®
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. • Faster Switching • Lower Leakage • 100% Avalanche Tested • Surface Mount D3PAK Package
G S
D3PAK
D
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS V GSM PD T J,TSTG TL IAR E AR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT5024SVR UNIT Volts Amps
500
RY A IN IM
MIN
22 88 ±20 ±30 280 2.
APT5024SVR Datasheet
