APT5024SVR Datasheet | Advanced Power Technology

500V 22A 0.240Ω POWER MOS V® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. - Faster Switching - Lower Leakage - 100% Avalanche Tested - Surface Mount D3PAK Package D3PAK MAXIMUM RATINGS Symbol VDSS ID IDM VGS V GSM PD T J,TSTG TL IAR E AR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current All Ratings: TC = 25°C unless otherwise specified. APT5024SVR UNIT Volts Amps RY A IN IM 22 88 ±20 ±30 280 2.24 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Volts Watts W/°C °C Amps m J Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current -55 to 150 300 22 30 1210 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions TYP MAX UNIT Volts Amps Drain-Source Breakdown Voltage (V GS = 0V, ID = 250µA) On State Drain Current 500 22 0.24 25 250 ±100 2 4 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 I D[Cont.]) Ohms µA n A Volts 050-5529...