Datasheet4U Logo Datasheet4U.com

APT5025BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

📥 Download Datasheet

Datasheet preview – APT5025BN

Datasheet Details

Part number APT5025BN
Manufacturer Advanced Power Technology
File Size 51.14 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Datasheet download datasheet APT5025BN Datasheet
Additional preview pages of the APT5025BN datasheet.

📁 Similar Datasheet

Other Datasheets by Advanced Power Technology
  • APT5025AN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
  • APT5025DN - Power MOS IV
  • APT5020BLC - Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
  • APT5020BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
  • APT5020BVFR - Power MOSFET
  • APT5020BVR - Power MOSFET
  • APT5020SLC - Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
  • APT5020SVFR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Full PDF Text Transcription

Click to expand full text
D TO-247 G S APT5025BN 500V ® 23.0A 0.25Ω 21.0A 0.30Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5030BN 500V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT 5025BN APT 5030BN UNIT Volts Amps 500 23 92 ± 30 310 2.48 500 21 84 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
Published: |