• Part: APT6015JN
  • Description: N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
  • Category: MOSFET
  • Manufacturer: Advanced Power Technology
  • Size: 61.79 KB
Download APT6015JN Datasheet PDF
Advanced Power Technology
APT6015JN
2 T- APT6015JN APT6018JN 600V 600V 38.0A 0.15Ω 35.0A 0.18Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, l LM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 6015JN APT 6018JN UNIT Volts Amps - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 600 38 152 ± 30 520 4.16 600 35 140 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 and Inductive Current Clamped Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current MIN APT6015JN APT6018JN APT6015JN APT6018JN APT6015JN...