Full PDF Text Transcription for APT8015JVR (Reference)
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APT8015JVR 800V 44A 0.150Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes ...
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Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SO ISOTOP ® 2 T- 27 "UL Recognized" • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular SOT-227 Package G D S Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 APT8015JVR UNIT Volts Amps 800 44 176 ±30 ±40 700 5.