APT8030JN Datasheet | Advanced Power Technology

2 T- APT8030JN APT8035JN 800V 800V 27.0A 0.30Ω 25.0A 0.35Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, l LM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 8030JN APT 8035JN UNIT Volts Amps - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 800 27 108 ± 30 520 4.16 800 25 100 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 and Inductive Current Clamped Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current MIN APT8030JN APT8035JN APT8030JN APT8035JN APT8030JN APT8035JN UNIT Volts 800 800 27 Amps ID(ON) (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25...