APT8030JVR Datasheet | Advanced Power Technology

800V 25A 0.300Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. ISOTOP ® 2 T- "UL Recognized" - Faster Switching - Lower Leakage - 100% Avalanche Tested - Popular SOT-227 Package Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current UNIT Volts Amps 800 25 100 ±30 ±40 450 3.6 -55 to 150 300 25 50 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Volts Watts W/°C °C Amps m J (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current UNIT Volts Amps 800 25 0.300 25 250 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA n A Volts 050-5574 Rev C Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5m A) APT...