Full PDF Text Transcription for APT8065AVR (Reference)
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APT8065AVR. For precise diagrams, and layout, please refer to the original PDF.
APT8065AVR 800V 11.5A 0.650Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JF...
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l enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-3 • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-3 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT8065AVR UNIT Volts Amps 800 11.5 46 ±30 ±40 200 1.6 -55 to 150 300 11.
APT8065AVR Datasheet
