APTC60DAM18CTG Datasheet | Advanced Power Technology

Features - CR1 OUT Q2 - Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated G2 S2 0/VBU S NTC1 FWD Si C Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration .. - - - - G2 S2 OUT VBUS 0/VBUS VBUS SENSE S2 G2 NTC2 NTC1 Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile - Ro HS pliant Max ratings 600 143 107 572 ±30 18 833 20 1 1800 Unit V - Rev 2 October, 2005 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C A V mΩ W A m J Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be...