Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 200kHz range - Soft recovery parallel diodes - Low diode VF.
Kelvin emitter for easy drive.
Very low stray inductance - Symmetrical design - Lead frames for power connections.
High level of integration Benefits.
Outstanding performance at high frequency operation.
APTGU50TA60P Datasheet
