APTM10DDAM09T3 Datasheet | Advanced Power Technology

Features - Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged - Kelvin source for easy drive - Very low stray inductance Symmetrical design - Internal thermistor for temperature monitoring - High level of integration Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile - Each leg can be easily paralleled to achieve a single boost of twice the current capability CR1 22 7 CR2 23 Q1 26 8 Q2 4 27 29 15 30 31 R1 32 16 28 27 26 25 .. 23 22 20 19 18 16 15 29 30 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://.advancedpower. 1- 6 - Rev 0 Max ratings Unit 100 V Tc = 25°C 139 ID Continuous Drain Current A Tc = 80°C 100 - IDM Pulsed Drain current 430 VGS...