APTM10DHM05 Datasheet | Advanced Power Technology

Features - G4 0/VBUS S4 .. - - OUT1 G1 S1 VBUS 0/VBUS - Benefits S4 G4 Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration OUT2 - - - - Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C m J These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://.advancedpower. 1-6 APTM10DHM05- Rev 0 May, 2005 Tc = 25°C Max ratings 100 278 207 1100 ±30 5 780 100 50 3000 Unit V A V mΩ W A All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS =...