APTM10SKM05T Datasheet | Advanced Power Technology

Features - Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged - Kelvin source for easy drive - Very low stray inductance - Symmetrical design - Lead frames for power connections - Internal thermistor for temperature monitoring - High level of integration Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile G1 S1 0/VBUS SENSE 0/VBU S NTC1 .. 0/ VBUS SENSE VBUS 0/ VBUS S1 G1 0/ VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C m...