APTM10TDUM09P Datasheet | Advanced Power Technology

Features - Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged - Kelvin source for easy drive - Very low stray inductance - Symmetrical design - Lead frames for power connections - High level of integration Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Very low (12mm) profile - Each leg can be easily paralleled to achieve a dual mon source configuration of three times the current capability Max ratings 100 139 100 430 ±30 9 390 100 50 3000 Unit V A September, 2004 1- 6 APTM10TDUM09P - Rev 0 .. D1 D3 D5 G1 S1/S2 S1 S2 G2 S3/S4 G3 S3 S4 G4 S5/S6 G5 S5 S6 G6 D2 D4 D6 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C V mΩ W A m J These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://.advancedpower. All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics...