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APTM10TDUM09P - MOSFET Power Module

Key Features

  • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged.
  • Kelvin source for easy drive.
  • Very low stray inductance - Symmetrical design - Lead frames for power connections.
  • High level of integration Benefits.
  • Outstanding performance at high frequency operation.
  • Direct mounting to heatsink (isolated package).
  • Low junction to case thermal resistance.
  • Solderabl.

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Datasheet Details

Part number APTM10TDUM09P
Manufacturer Advanced Power Technology
File Size 337.18 KB
Description MOSFET Power Module
Datasheet download datasheet APTM10TDUM09P Datasheet

Full PDF Text Transcription for APTM10TDUM09P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APTM10TDUM09P. For precise diagrams, and layout, please refer to the original PDF.

APTM10TDUM09P Triple dual common source VDSS = 100V RDSon = 9mΩ max @ Tj = 25°C ID = 139A @ Tc = 25°C Application • AC Switches • Switched Mode Power Supplies • Uninterru...

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C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies S5/S6 MOSFET Power Module D1 D3 D5 G1 G3 G5 S1 S1/S2 S3 S3/S4 S5 S2 G2 S4 G4 S6 G6 D2 D4 D6 Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable