APTM10TDUM19P Datasheet | Advanced Power Technology

Features - Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged - Kelvin source for easy drive - Very low stray inductance - Symmetrical design - Lead frames for power connections - High level of integration Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Very low (12mm) profile - Each leg can be easily paralleled to achieve a dual mon source configuration of three times the current capability MOSFET Power Module D1 D3 D5 G1 G3 G5 S1 S1/S2 S3 S3/S4 S5 S5/S6 S2 G2 S4 G4 S6 G6 D2 D4 D6 .. D1 D3 D5 G1 S1/S2 S1 S2 G2 S3/S4 G3 S3 S4 G4 S5/S6 G5 S5 S6...