APTM50AM38FT Datasheet | Advanced Power Technology

Features - Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged - Kelvin source for easy drive - Very low stray inductance - Symmetrical design - Lead frames for power connections - Internal thermistor for temperature monitoring - High level of integration Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile G1 S1 OUT Q2 G2 S2 0/VBU S NTC1 .. G2 S2 VBUS 0/VBUS S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 90 67 360 ±30 38 694 46 50 2500 Unit V A V m W W A m J Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be...