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APTM50AM17F Datasheet PDF

Advanced Power Technology APTM50AM17F

MOSFET Power Module

Part No. APTM50AM17F
Datasheet APTM50AM17F Download
Manufacturer
Advanced Power Technology
Description MOSFET Power Module
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APTM50AM17F datasheet page 1 preview

FEATURES

● Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
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● G1 S1
● VBUS 0/VBUS OUT Benefits
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● Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 500 180 135 720 ±30 17 1250 51 50 3000 Unit V A V mW W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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