MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C N - CHANNEL ENHANCEMENT MODE S G S 250V 1500W 40MHz High Performance Power RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified. ARF 1500 UNIT Volts Amps Volts Watts °C 1000 1000 30 ±30 1500 -55 to 200 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS VDS(ON) IDSS IGSS g fs V isolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage 1 MIN TYP MAX UNIT Volts µA nA mhos Volts 1000 9 100 1000 ±400 3 2500 3 5 5.3 (I D(ON) = 15A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero...
Advanced Power Technology
