MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter N - CHANNEL ENHANCEMENT MODE S G S 65V 1500W 40MHz A IN D FO VA R NC M AT ED IO N 200 200 70 ±30 1500 300 MIN TYP High Performance Power RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified. ARF 1500 UNIT Volts Amps Volts Watts °C Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. -55 to 200 STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS VDS(ON) IDSS IGSS g fs V isolation VGS(TH) Characteristic / Test Conditions On State Drain Voltage 1 MAX UNIT Volts µA nA mhos Volts Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) (I D(ON) = 35A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Gate-Source...
Advanced Power Technology
