Datasheet4U Logo Datasheet4U.com

ARF1502 - RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

📥 Download Datasheet

Datasheet preview – ARF1502

Datasheet Details

Part number ARF1502
Manufacturer Advanced Power Technology
File Size 114.77 KB
Description RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Datasheet download datasheet ARF1502 Datasheet
Additional preview pages of the ARF1502 datasheet.

📁 Similar Datasheet

  • ARF1505 - RF POWER MOSFET (Microsemi)
  • ARF2012 - FAST RECOVERY DIODE (Power Semiconductors)
  • ARF220 - FAST RECOVERY DIODE (Power Semiconductors)
  • ARF221 - FAST RECOVERY DIODE (Power Semiconductors)
  • ARF240 - FAST RECOVERY DIODE (Power Semiconductors)
  • ARF241 - FAST RECOVERY DIODE (Power Semiconductors)
  • ARF2496K - 2.4GHz RF Single Chip Transceiver FCC/ETSI Radiation Test Report (Alfa plus)
  • ARF260 - FAST RECOVERY DIODE (Power Semiconductors)
  • ARF300 - RF POWER MOSFET (Microchip)
  • ARF300 - RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE (Microsemi Corporation)
Other Datasheets by Advanced Power Technology
  • ARF1500 - RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
  • ARF1501 - RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
  • ARF1505 - N-Channel Power MOSFET
  • ARF440 - N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
  • ARF441 - N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
  • ARF442 - N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
  • ARF443 - N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET
  • ARF444 - N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET

Full PDF Text Transcription

Click to expand full text
S D S ARF1502 D G S ARF1500 BeO 135-05 RF POWER MOSFET • Specified 65 Volt, 27.12 MHz Characteristics: • Output Power = 900 Watts. • Gain = 17dB (Class C) • Efficiency > 75% MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter N - CHANNEL ENHANCEMENT MODE S G S 65V 1500W 40MHz The ARF1500 is an RF power transistor designed for class C/E operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. A IN D FO VA R NC M AT ED IO N 200 200 70 ±30 1500 300 MIN TYP • High Performance Power RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified.
Published: |