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D
TO-247
G S
ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz
THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443.
RF OPERATION (1-15MHz )
POWER MOS IV ®
N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET
The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications.
• Specified 100 Volt, 13.56 MHz Characteristics: • Output Power = 200 Watts. • Gain = 22dB (Typ.) • Efficiency = 73% (Typ.)
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case
• Low Cost Common Source RF Package.
ARF442 Datasheet
