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D
TO-247
G S
ARF444 300W 300V 13.56MHz ARF445 300W 300V 13.56MHz
THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445.
RF OPERATION (1-15MHz )
POWER MOS IV ®
N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET
The ARF444 and ARF445 comprise a symmetric pair of RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications.
• Specified 300 Volt, 13.56 MHz Characteristics: • Output Power = 300 Watts. • Gain = 18.7dB (Typ.) • Efficiency = 83% (Typ.)
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case
• Low Cost Common Source RF Package.
ARF444 Datasheet
