Advanced Power Technology ARF444
THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445. RF OPERATION (1-15MHz ) POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF444 and ARF445 comprise a symmetric pair of RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications.| Part No. | ARF444 |
|---|---|
| Datasheet | ARF444 Download |
| Manufacturer |  Advanced Power Technology |
| Description | N-CHANNEL ENHANCEMENT MODE RF POWER MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD RθJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case● Low Cost Common Source RF Package.
● Very High Breakdown for Improved Ruggedness.
● Low Thermal Resistance.
● Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified. ARF444/445 UNIT Volts 900 900 6.5 ±30 208 0.60 -55 to 150 300 Amps Volts Watts °C/W °C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC
ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1 MIN TYP MAX UNIT Volts 900 7 250 1000 ±100 4 2 5.7 5 nA mhos Volts µA VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (ID(ON) = 3.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 V...
