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MRF559G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Download the MRF559G datasheet PDF. This datasheet also covers the MRF559 variant, as both devices belong to the same rf & microwave discrete low power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Designed primarily for wideband large signal stages in the UHF frequency range.

Key Features

  • Specified @ 12.5 V, 870 MHz Characteristics.
  • Output Power = .5 W.
  • Minimum Gain = 8.0 dB.
  • Efficiency 50%.
  • Cost Effective Macro X Package.
  • Electroless Tin Plated Leads for Improved Solderability Macro X.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF559-AdvancedPowerTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MRF559G
Manufacturer Advanced Power Technology
File Size 135.19 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet download datasheet MRF559G Datasheet

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Other Datasheets by Advanced Power Technology

Part Number Description
MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF557G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Solderability Macro X DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TC = 75ºC Derate above 75ºC Storage Temperature Range Value 16 30 3.0 150 Unit Vdc Vdc Vdc mA 2.